PART |
Description |
Maker |
W28F321TSOP W28F321 |
NVM > Flash> High Density Flash Memory From old datasheet system
|
Winbond
|
W39F010 |
NVM >Flash Memory
|
Winbond
|
M29W640D M29DW323 M29DW324 M29DW640D70N1 M29DW640D |
64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory FLASH NOR HIGH DENSITY & CONSUMER
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
ISPLSI2064VE ISPLSI2064VE-100LB100 ISPLSI2064VE-10 |
3.3V In-System Programmable High Density SuperFAST?PLD 3.3VIn-SystemProgrammableHighDensitySuperFASTPLD 3.3V In-System Programmable High Density SuperFASTPLD EE PLD, 7 ns, PQFP44 CRYSTAL 16.0 MHZ 20PF SMD EE PLD, 13 ns, PQFP100 CRYSTAL 20.0 MHZ 20PF SMD RES 180K-OHM 1% 0.063W 200PPM THK-FILM SMD-0402 TR-7-PA2MM 3.3V In-System Programmable High Density SuperFAST PLD 3.3V In-System Programmable High Density SuperFAST⑩ PLD 3.3V In-System Programmable High Density SuperFAST?/a> PLD 280 MHz 3.3V in-system prommable superFAST high density PLD
|
Lattice Semiconductor, Corp. Lattice Semiconductor Corporation LATTICE[Lattice Semiconductor]
|
ISPLSI2192VE-135LT128 ISPLSI2192VE-180-L-T128 ISPL |
3.3V In-System Programmable SuperFAST High Density PLD 3.3V In-System Programmable SuperFAST⑩ High Density PLD 3.3VIn-SystemProgrammableSuperFASTHighDensityPLD RELAY SSR 110A 240VAC AC INPUT 3.3V In-System Programmable SuperFASTHigh Density PLD
|
LATTICE[Lattice Semiconductor] LatticeSemiconductor Lattice Semiconductor Corporation
|
STM32F103ZEH7XXX STM32F103ZEH6XXX STM32F103VET7XXX |
High-density performance line ARM-based 32-bit MCU with 256 to 512KB Flash, USB, CAN, 11 timers, 3 ADCs, 13 communication interfaces
|
STMicroelectronics
|
1024-60LH_883 ISPLSI1024-60LH_883 1024 1024-60LH/8 |
60 MHz in-system prommable high density PLD In-System Programmable High Density PLD EE PLD, 25 ns, PQCC68 :4; Features:Alumunium Foil Polyester/Tinned Copper Braid; Impedance:120ohm RoHS Compliant: Yes
|
Lattice Semiconductor, Corp. Lattice Semiconductor Corporation LATTICE[Lattice Semiconductor] http://
|
HDRIGHTANGLE 781-M15-113R141 781-M15-113R001 781-M |
MALE-HIGH DENSITY MALE-HIGH DENSITY-MACHINED CONTACTS-RIGHT ANGLE
|
List of Unclassifed Manufacturers
|
ISPLSI2128E-100LT176 ISPLSI2128E-135LT176 ISPLSI21 |
In-SystemProgrammableSuperFASTHighDensityPLD In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PQFP176 In-System Programmable SuperFAST High Density PLD In-System Programmable SuperFAST⑩ High Density PLD In-System Programmable SuperFAST?/a> High Density PLD
|
Lattice Semiconductor, Corp. Lattice Semiconductor Corporation LATTICE[Lattice Semiconductor]
|
ISPLSI2192VE100LB144 ISPLSI2192VE100LB144I ISPLSI2 |
3.3V In-System Programmable SuperFAST?High Density PLD 3.3V In-System Programmable SuperFAST?/a> High Density PLD 3.3V In-System Programmable SuperFAST High Density PLD 3.3V In-System Programmable SuperFAST垄芒 High Density PLD 3.3V In-System Programmable SuperFAST⑩ High Density PLD EE PLD, 13 ns, PQFP128
|
LATTICE SEMICONDUCTOR CORP
|
ISPLSI2032A-110LT48I ISPLSI2032A-135LJI ISPLSI2032 |
In-System Programmable High Density PLD EE PLD, 8 ns, PQFP44 In-System Programmable High Density PLD 在系统可编程高密度可编程逻辑器件 In-System Programmable High Density PLD EE PLD, 10 ns, PQCC44 In-System Programmable High Density PLD EE PLD, 10 ns, PQFP48 In-System Programmable High Density PLD EE PLD, 7.5 ns, PQFP44
|
Lattice Semiconductor Corporation Lattice Semiconductor, Corp.
|
STP80N03L-06 4881 |
N-Channel Enhancement Mode "Ultra High Density" Power MOS Transistor(N沟道增强模式高密度功率MOS晶体管) N沟道增强模式“超高密度”功率MOS晶体管(不适用沟道增强模式高密度功率马鞍山晶体管) N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR From old datasheet system N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
|
STMicroelectronics N.V. ST Microelectronics STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
|